ASTM-F1404:2007 Edition

ASTM F1404

Scope

1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F 47. Test Method F 47 also presents the definition of many crystallographic terms, applicable to this test method.

1.2 This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200 000/cm².

1.3 Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the <001> within ± 5° and must be suitably prepared by polishing or etching, or both. Unremoved processing damage may lead to etch pits, obscuring the quality of the bulk crystal.

1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Keywords

crystal perfection; etch pit density; gallium arsenide; potassium hydroxide etch; semiconductor; single crystal; Contamination semiconductors; Crystal lattice structure; Defects semiconductors; Density electronic applications; Etching (materials/process); Etch pit density (EPD); Gallium arsenide; Impurities electronic materials/applications; KOH etch pits; Microscopic examination electronic materials; Molten KOH etch technique; Monocrystalline perfection

ICS Code

ICS Number Code 29.045 (Semiconducting materials)

DOI: 10.1520/F1404-92R07