IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 \u00b5m to 100 \u00b5m; walls and trenches with respective widths of 5 \u00b5m to 150 \u00b5m; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 \u00b5m or larger, and with dimensions that fit inside a cube with sides of 100 \u00b5m. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.<\/p>\n
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| 4<\/td>\n | European foreword Endorsement notice <\/td>\n<\/tr>\n | ||||||
| 5<\/td>\n | English CONTENTS <\/td>\n<\/tr>\n | ||||||
| 7<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
| 9<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
| 10<\/td>\n | 4 Description of trench structures in a micrometer scale 4.1 General 4.2 Symbols and designations Figures Figure 1 \u2013 Schematic of example for trench structure in a micrometer scale and its cross section <\/td>\n<\/tr>\n | ||||||
| 11<\/td>\n | Figure 2 \u2013 Cross section of trench structure in a micrometer scale Figure 3 \u2013 Cross section of trench structure in a micrometer scale fabricated by a deep-reactive ion etching process with repeated deposition and etching of silicon Tables Table 1 \u2013 Symbols and designations of trench structure in a micrometer scale <\/td>\n<\/tr>\n | ||||||
| 12<\/td>\n | 4.3 Description 5 Description of needle structures in a micrometer scale 5.1 General 5.2 Symbols and designations Figure 4 \u2013 Schematic of typical needle structures formed of three and four faces <\/td>\n<\/tr>\n | ||||||
| 13<\/td>\n | 5.3 Description 6 Measurement method Figure 5 \u2013 Front, side and top views of typical needle structures Table 2 \u2013 Symbols and designations of needle structure in a micrometer scale <\/td>\n<\/tr>\n | ||||||
| 14<\/td>\n | Annex A (informative) Examples of measurement for trench and needle structures in a micrometer scale A.1 General A.2 Measurement for depth of trench A.2.1 Field emission type scanning electron microscopy <\/td>\n<\/tr>\n | ||||||
| 15<\/td>\n | A.2.2 Coherence scanning interferometer (CSI) Figure A.1 \u2013 FE-SEM image of trench structure with 5 \u03bcm-wide wall and 5 \u03bcm-wide trench Table A.1 \u2013 Example of measured data of trench depth <\/td>\n<\/tr>\n | ||||||
| 16<\/td>\n | Figure A.2 \u2013 Schematic of CSI microscope comprising an equal-light-path interferometer <\/td>\n<\/tr>\n | ||||||
| 17<\/td>\n | A.2.3 Stylus surface profiler Table A.2 \u2013 CSI magnification (objective lens\/ imaging lens) for measurement of all trench <\/td>\n<\/tr>\n | ||||||
| 19<\/td>\n | A.2.4 Confocal laser scanning microscopy Figure A.3 \u2013 Measurability for depth of trench structure with a depth of D and a width of WTu using a stylus surface profiler <\/td>\n<\/tr>\n | ||||||
| 20<\/td>\n | A.2.5 Atomic force microscopy <\/td>\n<\/tr>\n | ||||||
| 21<\/td>\n | A.3 Measurement for width of wall and trench at the upper surface of trench A.3.1 Field emission type scanning electron microscopy Figure A.4 \u2013 Relationship between shape of AFM probe tip and trench structure <\/td>\n<\/tr>\n | ||||||
| 22<\/td>\n | A.3.2 Coherence scanning interferometer A.3.3 Stylus surface profiler A.3.4 Confocal laser scanning microscopy <\/td>\n<\/tr>\n | ||||||
| 23<\/td>\n | A.3.5 Optical microscopy A.4 Measurement for side wall angle of trench by field emission type scanning electron microscopy A.4.1 Principle of measurement <\/td>\n<\/tr>\n | ||||||
| 24<\/td>\n | A.4.2 Preparation of sample A.4.3 Procedure of measurement A.4.4 Measurable range A.5 Measurement for wall and trench width at the bottom of trench by field emission type scanning electron microscopy A.5.1 Principle of measurement A.5.2 Preparation of sample A.5.3 Procedure of measurement A.5.4 Measurable range A.6 Measurement for geometry of needle A.6.1 Field emission type scanning electron microscopy <\/td>\n<\/tr>\n | ||||||
| 26<\/td>\n | A.6.2 Atomic force microscopy Figure A.5 \u2013 Front, side and top views of typical needle structures tilted to the back side with 30\u00b0 <\/td>\n<\/tr>\n | ||||||
| 27<\/td>\n | Figure A.6 \u2013 Relationship between shapes of AFM probe tip and needle structure <\/td>\n<\/tr>\n | ||||||
| 28<\/td>\n | Annex B (informative) Uncertainty in dimensional measurement B.1 General B.2 Basic concepts B.3 Example of evaluating uncertainty of the average depth of trench B.3.1 Sample and measured data for evaluating uncertainty Table B.1 \u2013 Example of measured data of trench depth <\/td>\n<\/tr>\n | ||||||
| 29<\/td>\n | B.3.2 Source of uncertainty B.3.3 Type A evaluation of standard uncertainty B.3.4 Type B evaluation of standard uncertainty B.3.5 Combined standard uncertainty B.3.6 Expanded uncertainty and result B.3.7 Budget table <\/td>\n<\/tr>\n | ||||||
| 30<\/td>\n | Table B.2 \u2013 Estimation of uncertainty in measurement <\/td>\n<\/tr>\n | ||||||
| 31<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Micro-electromechanical devices – Description and measurement methods for micro trench and needle structures<\/b><\/p>\n |