ASTM-F26 1999
$40.63
F26-87a(1999) Standard Test Methods for Determining the Orientation of a Semiconductive Single Crystal (Withdrawn 2003)
| Published By | Publication Date | Number of Pages |
| ASTM | 1999 | 5 |
ASTM F26-87a-Reapproved1999
Withdrawn Standard: Standard Test Methods for Determining the Orientation of a Semiconductive Single Crystal (Withdrawn 2003)
ASTM F26
Scope
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 These test methods cover techniques for determining the crystallographic orientation of a surface which is roughly parallel to a low-index atomic plane in single crystals used primarily for semiconductor devices.
1.2 Two types of test methods are covered as follows:
1.2.1 Test Method A, X-ray Diffraction Orientation- This test method may be used for the orientation of all semiconductive single crystals.
1.2.2 Test Method B, Optical Orientation- This test method is limited in application at the present time to elemental semiconductors.
1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 6.
Keywords
germanium; orientation; preferential etch; semiconductor; silicon; X-ray diffraction
ICS Code
ICS Number Code 29.045 (Semiconducting materials)
DOI: 10.1520/F0026-87AR99
