BS EN 60749-43:2017
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Semiconductor devices – Mechanical and climatic test methods – Guidelines for IC reliability qualification plans
| Published By | Publication Date | Number of Pages |
| BSI | 2017 | 44 |
IEC 60749-43:2017 gives guidelines for reliability qualification plans of semiconductor integrated circuit products (ICs). This document is not intended for military- and space-related applications.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | National foreword |
| 7 | English CONTENTS |
| 9 | FOREWORD |
| 11 | INTRODUCTION |
| 12 | 1 Scope 2 Normative references |
| 13 | 3 Terms and definitions 4 Product categories and applications |
| 14 | 5 Failure 5.1 Failure distribution Tables Table 1 – Examples of product categories |
| 15 | 5.2 Early failure 5.2.1 Description Figures Figure 1 – Bathtub curve |
| 16 | 5.2.2 Early failure rate Figure 2 – Failure process of IC manufacturing lots during the early failure period |
| 17 | Figure 3 – Weibull conceptual diagram of the early failure rate |
| 19 | 5.2.3 Screening Figure 4 – Example of a failure ratio: α (in hundreds) and the number of failures for CL of 60 % |
| 20 | Figure 5 – Screening and estimated early fail rate in Weibull diagram |
| 21 | Figure 6 – Bathtub curve setting the point immediately after production as the origin |
| 22 | 5.3 Random failure 5.3.1 Description 5.3.2 Mean failure rate Figure 7 – Bathtub curve setting the point after screening as the origin |
| 23 | Figure 8 – Conceptual diagram of calculation method for the mean failure rate from the exponential distribution |
| 24 | Figure 9 – Conceptual diagram of calculation method for the mean failure rate as an extension of early failure |
| 25 | 5.4 Wear-out failure 5.4.1 Description 5.4.2 Wear-out failure rate |
| 26 | Figure 10 – Conceptual diagram of the wear-out failure Figure 11 – Conceptual diagram describing the concept of the acceleration test |
| 28 | 6 Reliability test 6.1 Reliability test description 6.2 Reliability test plan 6.2.1 Procedures for creating a reliability test plan |
| 30 | Figure 12 – Concept of the reliability test in a Weibull diagram (based on sample size) Table 2 – Cumulative failure probability 0,1 % over 10 years [×10–6] for the third, fifth and seventh years |
| 31 | 6.2.2 Estimation of the test time required to confirm the TDDB from the number of test samples |
| 32 | 6.2.3 Estimation of the number of samples required to confirm the TDDB from the test time |
| 33 | 6.3 Reliability test methods Figure 13 – Concept of the reliability test in a Weibull diagram (based on test time) |
| 34 | Figure 14 – Difference in sampling sizes according tothe m value (image) |
| 35 | Table 3 – Major reliability (life) test methods and purposes |
| 36 | 6.4 Acceleration models for reliability tests 6.4.1 Arrhenius model Table 4 – Examples of the number of test samples and the test time in typical reliability (life) test methods |
| 37 | 6.4.2 V-model: 6.4.3 Absolute water vapor pressure model 6.4.4 Coffin-Manson model 7 Stress test methods |
| 38 | 8 Supplementary tests Table 5 – LTPD sampling table for acceptance number Ac = 0 Table 6 – Major reliability (strength) test methods and purposes |
| 39 | 9 Summary table of assumptions Table 7 – Supplementary tests |
| 40 | Table 8 – Accelerating factors, calculation formulae and numerical valuesa |
| 41 | 10 Summary |
| 42 | Bibliography |
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BS EN 60749-43:2017
Semiconductor devices – Mechanical and climatic test methods – Guidelines for IC reliability qualification plans…
