BS IEC 63068-1:2019
$142.49
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Classification of defects
| Published By | Publication Date | Number of Pages |
| BSI | 2019 | 26 |
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | undefined |
| 4 | CONTENTS |
| 5 | FOREWORD |
| 7 | INTRODUCTION |
| 8 | 1 Scope 2 Normative references 3 Terms and definitions |
| 12 | 4 Classification of defects 4.1 General |
| 13 | 4.2 Description of the defect classes 4.2.1 Examples of defects 4.2.2 Point defect 4.2.3 Micropipe Table 1 – Classification of defects |
| 14 | 4.2.4 TSD Figures Figure 1 – Micropipe |
| 15 | 4.2.5 TED Figure 2 – TSD |
| 16 | 4.2.6 BPD Figure 3 – TED |
| 17 | 4.2.7 Scratch trace Figure 4 – BPD |
| 18 | 4.2.8 Stacking fault Figure 5 – Scratch trace |
| 19 | 4.2.9 Propagated stacking fault Figure 6 – Stacking fault |
| 20 | 4.2.10 Stacking fault complex Figure 7 – Propagated stacking fault |
| 21 | 4.2.11 Polytype inclusion Figure 8 – Stacking fault complex |
| 22 | 4.2.12 Particle inclusion Figure 9 – Polytype inclusion |
| 23 | 4.2.13 Bunched-step segment Figure 10 – Particle inclusion |
| 24 | 4.2.14 Surface particle 4.2.15 Others Figure 11 – Bunched-step segment |
| 25 | Bibliography |
