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BSI PD IEC TS 62607-6-16:2022

BSI PD IEC TS 62607-6-16:2022

$142.49

Nanomanufacturing. Key control characteristics – Two-dimensional materials. Carrier concentration: Field effect transistor method

Published By Publication Date Number of Pages
BSI 2022 26
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PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
6 FOREWORD
8 INTRODUCTION
9 1 Scope
2 Normative references
3 Terms and definitions
10 3.1 General terms
3.2 Key control characteristics measured in accordance with this document
11 3.3 Terms related to the measurement method
4 General
4.1 Measurement principle
4.2 Sample preparation method
4.2.1 Sample preparation
4.2.2 Fabrication of FET
12 4.3 Description of measurement equipment
Figures
Figure 1 – Schematic of a back-gated graphene FET (inset: top view of the optical microscopic image)
13 4.4 Ambient conditions during measurement
Figure 2 – Experimental setup for measurements of electrical properties of FET device
14 5 Measurement procedure
5.1 Calibration of measurement equipment
5.2 Detailed protocol of the measurement procedure
6 Data analysis and interpretation of results
6.1 General
6.2 When the minimum conductance neutral point is clear
Tables
Table 1 – Specification of key control characteristics, 2D carrier concentration
15 6.3 When the minimum conductance neutral point is unclear
7 Results to be reported
7.1 Cover sheet
Figure 3 – Voltage shift obtained from transfer curves upon plasma doping with various plasma treatments onto the graphene, using 300-nm-thick SiO2 back gate insulator
Figure 4 – Voltage shift obtained from transfer curves of MoS2 FET
16 7.2 Product or sample identification
7.3 Measurement conditions
7.4 Measurement specific information
7.5 Measurement results
17 Annex A (informative)Graphene FET
A.1 Background
A.2 Test report
Table A.1 – 2D carrier concentration measured from graphene-FET for different doping-inducing Ar plasma treatment times
18 Annex B (informative)Graphene/hBN/MoS2 heterostructure memory FET
B.1 Background
Figure B.1 – Heterostructure FETs: (a) schematic view and circuit diagram of the fabricated device; (b) optical microscopic photograph of GBM FET; (c) optical microscopic photograph of MBG FET
19 Figure B.2 – Voltage shift obtained from transfer curves of two types of memory device upon charge injection
20 B.2 Test report
Table B.1 – Carrier concentration derived from the electrical characteristics of GBM and MBG
21 Annex C (informative)MoTe2 FET
C.1 Background
Figure C.1 – Optical microscopic image of MoTe2 FET and the thickness of 2D MoTe2 measured by AFM
22 C.2 Test report
Figure C.2 – Voltage shift observed from transfer curves measured by using 2D MoTe2 FET
23 Annex D (informative)WSe2 FET
D.1 Background
Figure D.1 – WSe2 FET
24 D.2 Test report
Figure D.2 – Transfer curves of 2D WSe2 FET devices before and after doping with contacts (inset: output curves of devices before and after doping)
25 Bibliography

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BSI PD IEC TS 62607-6-16:2022
$142.49